The Ge content in the epilayers was found to be homogeneous.An increase of Ge content reduces the growth rate of the epilayer,whereas boron doped epilayers have higher growth rate.

• 研究了锗硅应变外延层的生长特性和材料特性，生长速率随锗组分的增加而降低，以氢气为载气的硼烷对锗硅合金的生长速率有促进作用。