The CeO 2 films were deposited by pulsed laser ablation on hastelloy substrates at room temperature with the Ar + ion beam assistance.

• 室温下在 Ni Cr合金 ( Hastelloy c-2 75)基底上应用 Ar+ 离子源辅助 ；准分子脉冲激光沉积了Ce O2 薄膜 .