The CIG precursor film with a Cu/(In+Ga) atomic ratio of approaching 1.0 and an adjustable Ga/(In+Ga) ratio and with uniform distribution of all alloys was obtained.

• 制备得到了Cu/(In+Ga)原子比接近1,且Ga/(In+Ga)比例可调的成分分布均匀的CIG薄膜。