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- A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown. 研制成功了可商业化的 75mm单片超高真空化学气相淀积锗硅外延设备SGE50 0 ;并生长了器件级SiGeHBT材料 .
- According to the characteristics of SiGe HBT, such as holding high performance as GaAs which can meet the demand with RF ICs and having low cost because of the compatibility with Si technology, SiGe HBT has become one of the hot fields in the world. 由于SiGe异质结双极器件(HBT)既能像GaAs器件一样满足RF ICs对高性能要求,又可以与Si工艺兼容而具有低成本的优点,所以成为国内外研究的热点课题之一。
- We finally found that the device of SiGe HBT is more robust to hot carrier damage on high frequency and RF power performance when it is under the driving of a constant collector current. 并且在这实验的过程中,我们发现在固定集极电流驱动下的矽锗异质接面双极性电晶体,受到热载子伤害后,其高频特性以及功率特性相对地较不受到影响。
- An Emitter Delay Time Model of an SiGe HBT 发射极延迟时间模型
- SiGe HBT large signal equivalent circuit model 大信号等效电路模型
- Energy Transport Model of Scaling SiGe HBT 能量传输模型
- A Study on SiGe HBT Base Transit Time 基区渡越时间研究
- A model of the base transit time of SiGe HBT 基区渡越时间模型
- A Model for Base Transit Time in SiGe HBT's at High Current Density 大电流密度下的基区渡越时间模型
- Study of SiGe HBT Large Signal Diffusion Capacitance Models 大信号扩散电容模型研究
- Impact of Metal System on Self-Heating Effect of SiGe HBT's 自热效应的影响
- In this thesis, we also discussed and analyzed this practical reliability mechanism in SiGe HBTs, especially for its RF power applications. 这个接近实际操作下的热载子分析,也是本论中高频可靠度分析的一项重要主轴,尤其是在高频功率上所造成的影响。
- A 30 Finger Microwave Power SiGe HBT with 23V BV_(CBO) and f_T 7GHz BV_(CBO)为23V且f_T为7GHz30叉指微波功率SiGe HBT(英文)
- Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's 基区渡越时间能量传输模型
- Research on wet etching technique for SiGe HBT emitter mesa formation 发射极台面湿法腐蚀技术研究
- An Investigation into Simulation of SiGe HBT's with Super Self-Aligned Selectively Grown Base 超自对准结构模拟研究
- Simulation and Analysis of High-Frequency Characteristics of SiGe HBT's Based on Small-Signal Equivalent Circuit 高频特性模拟分析
- Parameters Characteristics of Ultra-thin-base SiGe HBT within the Whole Temperature Range 参数特性研究
- SiGe HBTs'Two Port Network Parameter Model and Its Simulation 双端口网络参数模型和模拟
- HBT Flowing Eqpmt Cleaning Tech Co., Ltd. 亨必通水流设备清洗技术有限公司。