Second, the Cu-metallized InGaP/GaAs HBT, with lattice-matched disordered InGaP structure was manufactured, this device exhibited comparable device performances with Au-metallized HBT.

• 第二，研究无序排列的磷化铟镓磊晶制作的铜金属化磷化铟镓/砷化镓异质接面双载子电晶体特性并和以金为金属化的异质接面双载子电晶体电子特性比较。