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- When the Schottky barrier height(Eb)is higher than 0.6 eV,any increase in Eb can result in apparent reduction in the DSSC maximum power output. 当TiO2/TCO的肖特基势垒(Eb)大于0.;6eV时;DSSC的最大功率输出值随Eb的增大而明显降低。
- The mean Schottky barrier height and lowest ideality factor were found to be 1.24eV and 1.03, respectively, as measured by (I - V). 电流 -电压测量得到肖特基势垒平均高度和理想因子分别为 1 .;2 4 e V、1
- The Schottky barrier height is increased, and the ideality factor is decreased to unity with decreasing the Pd grain size and particle size distribution. 论文后段则探讨以无电镀法制备之钯/砷化镓以及钯/氧化层/砷化镓元件于氢气感测效果之差异,并探讨不同钯膜微结构对于氢气感测性能之影响。
- Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes under the forward bias, the calculations for the Schottky barrier height ? eff and the specific on-resistance R on are presented. 在分析 4H SiC肖特基势垒二极管正向电流热电子发射理论的基础上 ;计算了肖特基势垒高度?eff和串联电阻Ron.
- Average-bond-energy method in Schottky barrier height calculation Schottky势垒高度理论计算中的平均键能方法
- Computer Simulation for the Effects of Inserted p Type Layer on Barrier Height of n CdTe Schottky Barrier Thin Film Solar Cell n-CdTe Schottky势垒薄膜太阳能电池中嵌入p型层对其势垒高度影响的计算机模拟
- Schottky barrier height 肖特基载流子高度
- Pt-GaAs Schottky barrier APDs have been investigated. Pt-GaAs肖特基势垒雪崩光电探测器已研制成功。
- Based on experimental comparison of various metal/InAlAs Schottky bar rier characteristics among Al,Pt,and Ti,Pt is deployed as E-MHEMT buried-Scho ttky gate due to its highest barrier height and easy to bury into InAlAs layer. 通过不同金属 (Al,Pt,Ti) / In Al As Schottky势垒系统的实验比较研究 ,确定在增强型 MHEMT工艺中采用具有最高势垒高度的 Pt Schottky埋栅结构 ;
- J.Liu, C.R.Oritz, Y.Z.Hang, H.Bakhru and J.W.Corbett, “Effects of Hydrogen on the Barrier Height of a Titanium Schottky diode on p-Type Silicon”, Phys.Rev.B, 44(16), 8918-8922, 1991. 周彦伊,“钯/磷化铟萧特基二极体氢气感测器之制备、特性分析及感测研究”,国立成功大学化学工程学系博士论文,2005。
- As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基势垒二极管为例,应用该方法,实现了高接触势垒情形下的正反向电流模拟。
- The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低电阻率的优点 ,采用 Ti制作肖特基二极管。
- The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. 研究了n型Au/GaN肖特基势垒紫外光探测器的电子辐照失效机理。
- Yet another object is to form a Schottky barrier between a semiconducting material and an active electrode. 还有另一个目的是在半导体材料与有源电极之间形成肖特基势垒。
- When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 当我们在矽基板上形成矽化镍时,将会有萧特基接面存在其间。
- The electron beam induced current (EBIC) character of palladium silicide-silicon (P-type)Schottky Barrier Diode (SBD) is observed. 本文用EBIC法对SBD元件进行了观测。
- The typical structure and fabrication technology of the iridium silicide Schottky barrier infrared detectors(IrSi-SBIRDs)are discussd. 本文讨论了硅化铱肖特基势垒红外探测器(IrSi-SBIRD)的典型结构和其制作技术;
- Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二极管D1和D2,而不是普通二极管,为的是减少总线上低状态电压,改进噪声极限。
- Research of barrier height and width in ZnO varistor ceramics[J].Insulators and Surge Arresters,2004(1):18-22. ZnO压敏陶瓷晶界势垒高度和宽度的研究[J].;电瓷避雷器;2004(1):18-22
- One proposed that the formation mechanism of IrSi/Si Schottky barrier should be correlated with the chemical bonds between IrSi and Si atoms at interface. 提出了IrSi/Si肖特基势垒形成机理与界面处IrSi和Si原子的化学键密切相关。