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- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
- Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes. 杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。
- Quantum wells intermixing (QWI) is demonstrated byphotoluminescent (PL) spectrum. 通过光荧光谱(PL)的测量,证明有量子阱混合现象产生。
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比,在相近的输出功率下,器件的光谱宽度从18nm提高到了37nm。
- ASYMMETRICAL COUPLING DOUBLE QUANTUM WELL INTERMIXING INDUCED BY COMBINATORIAL PROTON IMPLANTATION 组合注入质子导致不对称耦合双量子阱界面混合效应研究
- quantum well intermixing 量子阱混杂
- Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文 种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文 王得勇;刘杰;贾金锋;刘洪;薛其坤.
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用该论文 闫占彪;郭震宁.
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文 谭鹏;路洪.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续):垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续):平面雷射:双异质结构,量子井,多重电极,面发射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射:双异质结构,量子井,多重电极,面发射。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文 徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
- AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. 引用该论文 李献杰;刘英斌;冯震;过帆;赵永林;赵润;周瑞;娄辰;张世祖.