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- M-type four level atom 四能级原子
- N-type four level atom N型四能级原子
- Both transistors are not of the n. p. n type. 两个晶体管不都是n.;p
- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- Type FOURs are empathetic to feelings of others. 重视别人的感情世界的悲与喜，善解人意。
- A momentum transfer of a moving three level atom interacting slantingly with a standing wave laser field is analysed. 分析了一个运动的三能级原子与一个驻波激光场在斜交相互作用时的动量传递行为。
- By using quantum method and decorrelation approximation, the twophotonbistability equation in three level atom medium is obtained. 用量子的方法,退关联近似,获得了三能级简并双光子双稳态方程。
- Fully immerging horizontal slip type four capstan with multi-step replaceable tungsten carbide rings. 高性能精密斜齿轮传动，强供油润滑系统,高效率，低噪音。
- By using quantum method and decorrelation approximation, the twophoton bistability equation in three level atom medium is obtained. 用量子的方法,退关联近似,获得了三能级简并双光子双稳态方程。
- And draws a conclusion that doped N type monocrystal silicon is quite fit for micro EDM, while a non doped one isn't by a lot of EDM experiments. 对未掺杂单晶硅和掺杂N型硅进行了电火花加工工艺试验,得出了掺杂N型硅有很好的微细电火花加工性能的结论。
- Type FOURs like to think of themselves as being special. 喜欢与众不同，有自己的做事方式。
- Conclusion Abnormal changes of apo(s) i n type 2 dia betes mellitus may be a cause of type 2 diabetes associated with HTG and CHD. 结论载脂蛋白异常是2型糖尿病患者的代谢紊乱特征，同时可能是2型糖尿病发生脂代谢紊乱和冠心病的重要原因。
- Above four levels, reads, said, writes, translates the fluency. 在四级水平以上, 读, 说, 写, 翻译流畅。
- System can be classified into two,three or four levels. 制度可以划分为两个、三个甚至四个层次;
- The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper. 报道了n型GaAs上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的GaAsMES－FET的失效分析。
- A feasible scheme is presented for the teleportation of an unknown atomic state via far off resonant interaction of a degenerate V type three level atom with coherent state cavity field. 根据简并V型三能级原子与光场的远离共振相互作用系统的改进型有效哈密顿量,通过矩阵方法,推导出系统随时间演化的波函数,提出一种未知原子态的隐形传态方案。
- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究; 并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。
- Form macro and microlevel ,the forming of the medicine industrial cluster of Tonghua have four level, Themedicine industrial cluster is the main important factor that. 医药产业集群是推动通化经济高速发展的主要动力和重要因素。
- P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells. 采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。
- High order harmonic spectra in an intense laser field are obtained by salving the time dependent schrodinger equations with two level atom model.The results are agreement with experimental data. 利用两能级原子模型，通过直接求解含时薛定谔方程得到了强激光场中的高次谐波谱，和实验中观察到的谐波谱相似。
