It is also shown that stacking mismatch boundaries(SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H-SiC(0001) surface may be removed by stacking faults as the lm grows.

• 6H-SiC(0001)衬底表面台阶引起的GaN岛合并在薄膜中产生边界堆垛失配(SMBs)；而这种SMBs缺陷随着薄膜生长厚度的增加可以消除.