In view of its virtue of high degree of electron and ion generations, hot wire assisted hot wire assisted the microwave electron cyclotron resonance (MWECR) CVD is expected to deposit device quality a-Si:H at high deposition rate.

• 热丝辅助微波电子回旋共振化学气相沉积(MWECR CVD)方法具有电子和离子产生率高等优点,能在较高的沉积速率下获得器件级质量的a-Si:H 薄膜。