In this work, both NMOS and PMOS present the same result, this is, as the silicon substrate is bent, the sharper of the curve, the worse of the reliability.

• 利用此方法，我们成功提高NMOS的汲极电流与载子迁移率，提升幅度分别为12%25与6%25。在PMOS方面，则无任何改变量。