In this thesis the influence of the edge effect of the epitaxial film and the mask material on the strain of the SiGe/Si heterostructure grown in limited area is firstly studied.

• 本论文中我们研究微区中外延生长SiGe/Si异质结构，由于外延层和掩膜窗口的边缘效应所引起的应变的变化，并讨论此应变的变化对于材料物理性质的影响。