In addition, when SiC was oxidized in high temperature, the volume fraction of SiO_2 and thickness of SiO_2 layer were increase with the increase of temperature and holding time, and increase more quickly with the holding time.

• 另外,预制型在高温氧化条件下,SiC氧化生成的SiO_2所占的体积分数以及氧化层厚度都随着氧化温度的升高和高温保温时间的延长而增大,并且受保温时间影响较为显著。