IMPATT

 
       
  • n. 碰撞雪崩渡越时间二极管

IMPATT的用法和样例:

例句

  1. The peak power output of pulsed IMPATT source of 3.2W at 1% duty cycle is achieved at 30.52GHz, frequency chirp during the bias pulse is less than 800MHz.
    振荡源在30.;52GHz的频率上;脉冲峰值功率为3
  2. The corresponding curves are given here. With these results in mind, 3-mm band P+NN+ IMPATT and 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence.
    已利用这些结果设计和研制成3mm P~+NN~+崩越二极管和8mmP~+PNN~+双漂移崩越二极管;获得了良好性能.
  3. Analysis of Transit Angle of DDR IMPATT Diode
    双漂移崩越二极管的渡越角分析
  4. Thermal Resistance Measurement of IMPATT Diodes
    IMPATT二极管热阻测试
  5. J-BAND SILICON DDR IMPATT DEVICE
    J波段硅DDR IMPATT器件
  6. LARGE-SIGNAL ANALYSIS OF IMPATT DEVI CES
    IMPATT器件的大信号分析
今日热词
目录 附录 查词历史