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- Groove gate MOS devices 槽栅MOS器件
- grooved gate mos transistor v 型栅金属氧化物半导体晶体管
- Reduction of Gate Current in Nanoscale MOS Devices 减少纳米MOS器件栅电流的研究分析
- Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work. 最后,我将提出矽化镍在光侦测器上的可行性并为了更进一步的研究而设计出所谓的光闸极金氧半电晶体。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。 系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比,以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 当金氧半元件缩小至深次微米区域,矽氧化层的厚度也随之变薄。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合电荷泵的基础上提出了一种8(7)管4倍电荷泵。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文从不同方面对BF_2~-注入MOS管低剂量率辐照效应进行了深入的研究。
- MOS devices have to suffer from ionizing radiation as they are widely used in theenvironment of space, nuclear energy and nuclear weapon. 随着航天技术、核能技术及其核武器等高技术的迅速发展,越来越多的MOS器件需要在电离辐射环境中工作。
- refractory metal gate MOS integrated circuit 难熔金属栅MOS集成电路
- silicon gate MOS integrated circuit 硅栅MOS集成电路
- First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices. 首先,增加了处理速度和功能密度的需求,推动IC制造者进一步缩减MOS装置的最小尺寸。
- polycrystalline silicon gate mos 多晶硅栅金属氧化物半导体
- ion implantation gate MOS integrated circuit 离子注入MOS 集成电路
- IGMOSFET; Isolated Gate MOS Field Effect Transistor 绝缘栅金属氧化物半导体场效应晶体管
- avalanche injection stacked gate mos 雪崩注入多层栅金属氧化物半导体
- molybdenum gate MOS integrated circuit 钼栅MOS集成电路
- ion implantation gate MOS intergrated circuit 离子注入MOS集成电路
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 经由适当的设计MOS元件的参数,我们可以在 其电流-电压特性曲线上得到负微分电阻的特性。