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- Indium Arsenide Infrared Detector 砷化铟红外探测器
- Diffused red, gallium arsenide phosphide red. 功能应用: Discrete LED indicator.
- Scientists have also developed a promising hybrid approach to producing a silicon-based laser that relies on adding a piece of gallium arsenide or indium phosphide to the top of a silicon substrate. 科学家还开发出一种复合方法,在矽基质加上一层砷化镓或磷化铟,制作出矽雷射装置。
- Indium,boron and gallium are used in making solar cells. 铟,镓,硼,应用到太阳能电池中。
- indium arsenide 砷化铟
- indium arsenide detector 砷化铟探测器
- indium arsenide photodiode 砷化铟光电二极管
- Common lasing media such as gallium arsenide, in comparison, feature emission efficiencies some 10,000 times larger. 相比之下,砷化镓等常用雷射材料的发光效率则是矽的一万倍。
- This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 因此本论文研究在槽线架构下,不同馈入方式在频率响应上的影响。
- The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS). 目前为止,光电薄膜最有效的材质是铜铟硒化镓(CIGS)。
- Global Solar uses a technology known as copper indium gallium selenide (CIGS) to make its thin-film solar cells. 全球太阳能利用技术称为铜铟镓硒( CIGS )将其薄膜太阳能电池。
- To produce the electron beam, a laser will fire at a target made of gallium arsenide, knocking off billions of electrons with each pulse. 产生电子射束的方法,是利用一道雷射轰击用砷化镓制成的标靶,每个脉冲会打出几十亿个电子。
- The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。
- The high cost of indium is a consideration. 铟的高成本是一个需要考虑的问题。
- In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it. 用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。
- Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate. 砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。
- New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips. 为像含有种种要素数层的金家砷化物和金家铝砷化物这样的集成电路的新基础材料,可能成为较快速的薯条因素。
- Belcher is trying to get her phage to attach to safer particles made of gallium nitride, indium nitride or some other semiconductor. 贝契想在她的噬菌体上连接其他较安全的粒子,如氮化镓、氮化铟或其他半导体。
- Single crystal gallium arsenide wafers are for applications that are extensively used in the opto-electronics and microelectronics industries. 公司注册地址在北京经济技术开发区,总占地面积24000平方米,注册资金1500万美元,总投资金额4500万美元。
- The study progress and research trend at present on the complex of scattered elements involving gallium, indium and thallium have been described. 概述了稀散元素镓、铟和铊配合物的研究进展和目前研究动向.