For this reason, alternative material systems including InGaAs, InGaAlAs, and InGaAsP with different compressive strains are explored in an attempt to obtain optimal strain level.

• 因此本文将研究具有不同压缩应力之砷化铟镓、砷化铝镓铟与砷磷化铟镓量子井结构，进而探讨最佳的压缩应力值。