Enhanced DC characteristics, improved high-temperature device performance, and superior thermal stability have been successfully achieved in the dilute InGaAsN(Sb) channel HFET design.

• 直流特性的增进，元件高温特性的改善和优异热稳定性都成功的于以微量锑的锑砷化铟镓通道异质结构电晶体设计中获得。