Dislocation densit y and facet roughness of AlGaInN laser diodes were improved significantly by mak ing the laser stripes just above the laterally grown regions of ELO GaN basal l ayer.

• 在ELO GaN基层上用激光进行条状化处理 ,可以明显地改善AlGaInN激光二极管的位错密度和界面的粗糙度。