Diffusion bonding of Si 3 N 4 to Ni was carried out using non active metal interlayers of FeNi/Cu under high and low vacuum conditions. After bonding,HIP processes were also used for some joints. Joint strength was determined by four-point bending tests.

• 采用非活性金属中间层FeNi/Cu在高、低真空条件下进行了Si3 N4 陶瓷与Ni的扩散连接 ,然后对部分接头进行了热等静压 (HIP)后处理 ,测定了连接接头的四点弯曲强度 ,用扫描电镜 (SEM)、电子探针 (EPMA)和X射线衍射仪 (XRD)对连接界面区域进行了分析。