CH4 and SiCl4 are used as raw material,N,as carrying gas for SiCl4 and H2 as dilution gas. CVD SiC coating is prepared with two kinds of ratio and three kinds of temperature.

• 用CH4和N，为载气的SiCl4作原料，用H2为稀释气，在两种气体混合比和三种温度下化学气相沉积SiC涂层。