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- Y. I l C v m. B I d m i y w t t m a t o. 阿美：那好吧。那个男人老了，他去他的妻子的坟前，手拿一枝玫瑰，但是当他到那里的时候，他发现已经有人在她的坟前放了一枝玫瑰。
- A new appliaction for the C V instrument has been developed. 同时也为C－V仪开发了一种新的应用
- Screen the stem proliferation medium of Pyrus Pyrifolia C V. 与相似的文献。
- The calculated (CTOA) C by above formula from C V is coincidence well with that by the formula from DWTT. 用管材Charpy冲击韧性CV 试验结果计算得到的 (CTOA) C 与用DWTT试验结果的经验公式计算得到的 (CTOA) C 非常吻合。
- The Duncan E- v model was adopted to analyze dam before strengthen so as to estimate the original stress and displacement status. （5）采用邓肯模型对未加固前的大坝进行非线性有限元分析，研究了大坝加固前的初始位移应力状态；
- The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. 用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。
- The experimental C V curves with and without laser radiation were measured. The relative variation ratio of capacitance with laser radiation at 0 4 voltages is 39 5%. 在激光辐射下，测出样管在光照前后的C－V实验曲线及样管在0.;4V偏压下，光照前后的电容相对变化率为39
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- In this paper,I suggest the integration ?C V? method that is applicable to measuring Si epitaxial layer resistivity of homogeneity with impurity longitudinal distribution. 本文提出了积分C－V法，它适用于杂质纵向分布均匀的外延层电阻率的测量，该方法简便。
- After analyse the V model of test process, put forward that testing life cycly consists of four phases: devise test plan, design use case, execute use case and bug management. And summarize the plan, task and work flow of all the phases. 通过分析测试过程的V 模型,提出了软件测试生命模型由四个阶段组成:制定测试计划、设计测试用例、执行测试用例以及缺陷管理,总结了各个阶段的计划、任务以及工作流程,并对该模型中涉及的测试资源、测试策略和测试文档等进行了选择性的详略介绍。
- L s*f g c v n. s u1q ==> 有人会说，我有了技术！
- Using high frequency(1MHz)capacitance voltage( C V )test and the infrared(IR) spectroscopy,the effect of the deposition condition on the interfacial properties of the CVD SiO 2 formed by the vacuum ultraviolet(VUV)light is studied. 采用高频（1MHz）C－V测试和红外谱，研究了工艺参数对Xe激发真空紫外光直接光CVDSiO2的SiO2/Si界面特性的影响。
- A new method of measured breakdown voltage V B of PN junction by measuring C V characteristic of PN junction has been presented in this paper. It has got more fine curve of breakdown characteristic than traditional method. 提出了一种通过测量PN结的势垒电容的C－V特性来测量PN结的击穿电压VB的方法，与传统的方法相比它有更精细的击穿特性曲线；
- We advance two theoretical models: Y and V model of El ectromagnetically Induced Two-Photon Transparency. We compare characteristics of these two models and point out advantage of V model. 给出了双光子电磁感应光透明的两种理论模型：Y模型和V模型，比较了两种模型的特性，并指出了V模型的优点。
- The Reseach results show that:the films annealed by RCA process have larger grain size and remnant polarization,the I V dependence deviated from Ohm's law, C V curve shows sharper nonlinearity peaks. 研究表明，快速与传统结合热处理薄膜具有较大的晶粒尺寸和较大的剩余极化强度，I－V特性偏离欧姆定律，具有压敏电阻特性，C－V曲线具有较尖锐的非线性峰。
- C - V model C-V模型
- C comes after B in the alphabet. 在字母表中C接在B后面。
- Let u and v be nonconsecutive vertices on c. 设u和v是c上不相邻的两个顶点。
- B comes before C in the alphabet. B在字母表里排在C之前。
- She left out a "c" in "account" . 她在"account"这个词中漏掉了一个"c"。
