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- A new method of measured breakdown voltage V B of PN junction by measuring C V characteristic of PN junction has been presented in this paper. It has got more fine curve of breakdown characteristic than traditional method. 提出了一种通过测量PN结的势垒电容的C-V特性来测量PN结的击穿电压VB的方法,与传统的方法相比它有更精细的击穿特性曲线;
- Y. I l C v m. B I d m i y w t t m a t o. 阿美:那好吧。那个男人老了,他去他的妻子的坟前,手拿一枝玫瑰,但是当他到那里的时候,他发现已经有人在她的坟前放了一枝玫瑰。
- A new appliaction for the C V instrument has been developed. 同时也为C-V仪开发了一种新的应用
- Screen the stem proliferation medium of Pyrus Pyrifolia C V. 与相似的文献。
- The calculated (CTOA) C by above formula from C V is coincidence well with that by the formula from DWTT. 用管材Charpy冲击韧性CV 试验结果计算得到的 (CTOA) C 与用DWTT试验结果的经验公式计算得到的 (CTOA) C 非常吻合。
- The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. 用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。
- The experimental C V curves with and without laser radiation were measured. The relative variation ratio of capacitance with laser radiation at 0 4 voltages is 39 5%. 在激光辐射下,测出样管在光照前后的C-V实验曲线及样管在0.;4V偏压下,光照前后的电容相对变化率为39
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- In this paper,I suggest the integration ?C V? method that is applicable to measuring Si epitaxial layer resistivity of homogeneity with impurity longitudinal distribution. 本文提出了积分C-V法,它适用于杂质纵向分布均匀的外延层电阻率的测量,该方法简便。
- L s*f g c v n. s u1q ==> 有人会说,我有了技术!
- Using high frequency(1MHz)capacitance voltage( C V )test and the infrared(IR) spectroscopy,the effect of the deposition condition on the interfacial properties of the CVD SiO 2 formed by the vacuum ultraviolet(VUV)light is studied. 采用高频(1MHz)C-V测试和红外谱,研究了工艺参数对Xe激发真空紫外光直接光CVDSiO2的SiO2/Si界面特性的影响。
- The Reseach results show that:the films annealed by RCA process have larger grain size and remnant polarization,the I V dependence deviated from Ohm's law, C V curve shows sharper nonlinearity peaks. 研究表明,快速与传统结合热处理薄膜具有较大的晶粒尺寸和较大的剩余极化强度,I-V特性偏离欧姆定律,具有压敏电阻特性,C-V曲线具有较尖锐的非线性峰。
- Let u and v be nonconsecutive vertices on c. 设u和v是c上不相邻的两个顶点。
- C comes after B in the alphabet. 在字母表中C接在B后面。
- S, b I a n. A m s t s y c t v s. 招待员:对不起,恐怕不行。另外,一定要把您的手机调成震动状态。
- B comes before C in the alphabet. B在字母表里排在C之前。
- I w v h, b I w t c. I m s s m. I s b m c n t. 苏珊:我学习得很努力了,但就是太粗心,犯了一些愚蠢的错误。我下次得更细心一些。
- She left out a "c" in "account" . 她在"account"这个词中漏掉了一个"c"。
- I h t y p v g s, s w I n a m, I c y g f. 本杰明:听说你们的服务做得很好,所以现在我需要搬家,就先找你们了。
- Maria C M Alvim-Ferraz, Sergio A V Afonso. 鞍山热能研究院国家“863计划”课题组.