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- Bulk Flash memory 大容量Flash
- Flash memory can be easily erased and reprogrammed. 闪存可以很方便地擦除和改写。
- Support save to flash memory card directly, never lost your save. 存档备份到存储卡,绝不掉档。
- Flash memory at the maximum 72 MHz system clock rate. 最大能到系统时钟的速度，不过前提是顺序指令结构。
- The company will comprise the flash memory units of Intel and STMicro. 新公司由英特尔和意法半导体的闪存部门组成。
- For our common valuable Flash Memory, StarFans arround thr world, UNITE! 为了我们共同的宝贵闪存，全世界的星迷们联合起来！
- There is also some diversity among FLASH memory products with respect to the programming method. 另外还有一些flash的差异，即写入的方式。
- Windows Vista uses ATA-8 commands to define the disk data to be held in the flash memory. Windows Vista使用ATA-8命令来定义要在闪存中存放的磁盘数据。
- SQL Server Compact Edition supports external storage devices, including Compact Flash memory and drives. SQL Server Compact Edition支持外接存储设备,包括Compact Flash内存和驱动器。
- Each bit of data in a flash memory device is stored in a transistor called a floating gate. 每一个比特的数据储存在快闪记忆装置称为浮栅晶体管。
- Common storage devices include external hard disk drives and flash memory cards. 常用的可移动媒体包括CD和DVD光盘以及可移动存储卡。
- The NAND flash memory and USB2.0 interface are introduced in the design of Dynamic Electrocardiogram to improve the DCG's performance and convenience. 在传统动态心电图机的设计基础上;提出应用大容量NAND闪存和高速USB2.;0接口;提高心电图机的性能和易用性。
- It was used JTAG interface to download the program to the FLASH memory of C8051F020. 并把程序用JTAG接口下载到C8051 F020的FLASH存储器中。
- For Flash memory,I introuce the principle of NOR Flash and NAND Flash, and how their drivers implemented. 对Flash闪存驱动,分别介绍了NOR Flash和NAND Flash的原理以及它们的驱动实现。
- All the controlling program can be downloaded to 4K byte flash memory in single chip computer . AT89C51单片机内含128字节RAM和4K字节快闪存储器(Flash Memory)，因此，全部控制程序可装入单片机。
- Meanwhile, studios and retailers are poised to introduce movie-download kiosks, using flash memory. 同时，制造公司和零售商都准备在推出使用闪存的电影下载亭。
- The major purpose of this paper is to study and implement the fast Nand type flash memory, denoted by FNandFlash. 本论文的主要目的是研究与实作一颗快速的反及闸快闪记忆体，使其可应用到大量储存媒体中。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- Do they charge carriage by bulk? 他们是否按体积计算运费？
- In addition, the performance of flash memory with the nanocrystal as the charge trapping layer was also demonstrated. 此外，我们利用溶胶-凝胶法形成之奈米微晶粒材料运用于快闪式记忆体元件中作为记忆体元件之电荷捕陷层，并探讨其电性表现。
