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- MnxCd1-xIn2Te4 ingots were grown by Bridgman method. 本文首次采用Bridgman法生长了Mn_xCd_(1-x)In_2Te_4晶体，并研究了晶体中相的形貌、结构、成分和晶体中各组元沿轴向和径向的成分分布。
- Sb doped PbWO 4 crystals have been grown by means of modified Bridgman method. 采用改进的布里奇曼 (Bridgman)法生长了掺杂Sb2 O3的PbWO4 晶体。
- The Bridgman method is widely used in the growth of single crystals. 许多单晶半导体材料的垂直生长都使用了Bridgman法.
- Bridgman method for tetragonal system was investigated by numerical simulation. 本文对四方晶系晶体的Bridgman法生长进行了稳态数值模拟。
- As-grown Cd0.9Zn0.1Te wafer prepared by vertical Bridgman method was annealed using Cd1-yZny alloy as source. 采用Cd1-yZny合金作退火源;对垂直布里奇曼法生长获得的Cd0.;9Zn0
- Finite element analysis has been used to calculate the stress distribution in crystals grown by the Bridgman method. 本文用有元分析法计算了 Bridgman 法生长的晶体中的应力分布。
- One diluted magnetic semiconductor of Mn x Cd 1- x In 2Te 4 ( x =0.22) ingot has been grown by Bridgman method. 采用Bridgman法生长四元稀磁化合物半导体Mn0 .;2 2Cd0
- The Bridgman method was used in the vertical growth of single crystal semiconducting materials. 单晶半导体材料的垂直生长都使用了Bridgman法。
- Diluted magnetic semiconductor MnxCd1-xIn2Te4(x=0.1, 0.22 and 0.4) ingots were grown by the Bridgman method. 采用Bridgman法生长了x为0.;1;0
- Single crystal of Cr~(3+): LiCaAlF_6 was grown by vertical Bridgman method from stoichiometric composition melt. 用垂直Bridgman法从化学计量比组份的熔体中长出Cr~(3+):LiCaAlF_6单晶。
- An analysis for the growth process of PbI2 single crystal by bridgman method has been made. 本文分析了用布里奇曼法生长碘化铅单晶体的结晶过程。
- Several types of macro-defects existed in the BGO crystal grown by the Bridgman method. 下降法生长的BGO晶体中存在几种典型的宏观缺陷。
- The crystal growth technique of large size Y:PbWO4 crystal by the Bridgman method was discussed. 工程化制备技术是制约大尺寸先进结构陶瓷应用的关键。
- Transient numerical simulation for Bridgman method was carried out by means of deforming finite element method . 采用变形有限元法对坩埚下降法晶体生长过程进行了瞬态数值模拟。
- The defects of bismuth germanate crystal grown by Bridgman method were investigated. 对坩埚下降法生长锗酸铋（BGO）闪烁晶体的缺陷进行研究。
- In crystal growth experiment, PbI_2 single crystal was grown by Vertical Bridgman Method (VBM) in the two- temperature zone vertical growth furnace. 晶体生长实验中,我们自行设计了双温区管式电阻生长炉,采用垂直布里奇曼法(VBM),以合成的PbI_2多晶为原料进行晶体生长。
- High quality Cr:LiSrAlF_6 (abbreviated as Cr:LiSAF) crystals were grown by Bridgman method and their laser performance are reported in this paper. 本文报道了布里奇曼法生长的高品质Cr:LiSrAlF6晶体及其激光特性。
- Crystal growth dynamics theory and technique of vertical bridgman method for GaAs single crystal growing were introduced. 简要阐述了垂直布里奇曼(VB)法生长GaAs单晶材料的动力学原理及VB-GaAs单晶的生长技术。
- Several <001>?cut plates were obtained and their quality was better than that of PZNT plates grown by gas?cooling Bridgman method. 晶体沿(001)面切出数片,晶片质量明显好于通气Bridgman法生长的PZNT单晶。
- Several ingots of Hg_(1-x)Mn_(x)Te were produced by Bridgman method, and their optical and electronical properties were tested. 本文采用常规的布里奇曼(Bridgman)法，通过改进和优化生长工艺，获得Hg_(1-x)Mn_xTe单晶。
