Bottom electrodes of CaRuO_3 (CRO) and LaNiO_3 (LNO) buffer-layers are prepared by radio frequency sputtering and PLD, respectively. Using CRO and LNO buffer-layers, BST35/CRO and BST50/LNO heterostructure thin films are prepared.

• 并且用CaRuO_3(CRO)和LaNiO_3(LNO)分别改善BST35和BST50的介电特性与介电调谐特性;