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- Binary Oxide Film Memory 二进制氧化软片存储器
- The recent development in the study of CeO_2TiO_2 binary oxide is reviewed. 介绍了CeO2-TiO2复合氧化物制备方法及性能特征;
- If the oxide film is hard, sliding occurs on the outside thereof. 如果氧化膜较硬，则滑动在它们的外面发生。
- CONCLUSION The zinc oxide film is well designed,easily prepar... 结论:本制剂设计合理,制备工艺简单,质量控制方法可靠。
- CeO_2+SnO_2 binary oxide coated titanium anodes were prepared by the sol-gel method. 用溶胶凝胶法制备了CeO2+SnO2/Ti二元氧化物被覆钛涂层。
- It is suggested that the interaction of SO 2- 4 group with Zr in binary oxide result in the forming of acid sites. 研究结果表明 ;SO2 - 4基团与二元氧化物中Zr原子作用形成了酸性中心 .
- The cool product is submerge in the solution, which remove the oxide film. 将冷却后的钢材浸入溶液中可除去氧化膜。
- The cool products are submerged in the solution,which removes the oxide film. 将冷却后的钢材浸入溶液中可除去氧化膜。
- The method also applies to the binary oxides of subgroup elements. 新方法可标度周期表中二元氧化物的光学碱度。
- The cool products are submerged in the solution, which removes the oxide film . 将冷却后的钢材浸入溶液中可除去氧化膜。
- The cool products are submerged in the solution, which removes the oxide film. 将冷却后的钢材浸入溶液中可除去氧化膜。
- The oxide film composition of burnt surface has been discussed by means of XPS. 并应用XPS对烧伤表层氧化膜组份进行了探讨。
- Immediately below the oxide film and often mingled with it in an intricate way is the true surface layer of the metal. 氧化膜的下面就是真正的金属表层，氧化膜常常与金属表面层以复杂的形式混合在一起。
- T.-C.Wen and C.-C.Hu.,”Hydrogen and Oxygen Evolutions on Ru-Ir Binary Oxides” ,J Electrochem.Soc., 139, 2158 (1992). 黄耀煌;“循环伏安法置备之含水钌氧化物于电化学电容器之应用”;国立中正大学化工研究所硕士论文;1999.
- A flaky oxide film formed on a metal, as on iron, that has been heated to high temperatures. 氧化层给金属高温加热生成的片状氧化物，如铁上
- A flaky oxide film formed on a metal,as on iron,that has been heated to high temperatures. 氧化层给金属高温加热生成的片状氧化物，如铁上
- Reactions often reduced by the formation a thin oxide film which limits access of oxygen, water vapor, and other gases. 反应常常由于氧化薄膜的形成而减弱;因为氧化膜阻止了氧气;水蒸气和其它气体的进入.
- The characters of the cracking and spallation mode of oxide film were discussed. 讨论了合金表面氧化膜开裂和剥落的特点。
- A mixed sulfuric acid boric acid solution was used to prepare the anodized oxide film for Al alloys. 摘要采用硫酸-硼酸混合液制备铝合金氧化膜。
- The present invention relates to a method for forming an oxide film in semiconductor devices. 本发明涉及一种用以在半导体器件中形成氧化膜的方法。
