Based on the theory analysis of photocurrent distribution in the base region of color sensor, it can be found that the impurity concentration and the junction depth arc the main factors.

 
  • 在对器件基区中光生电流分布规律进行理论分析的基础上,得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
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