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- The main reasons that the absorption was changed by different annealing temperatures were analysed by the measurements of XRD, SEM, EDX. 通过XRD、SEM、EDX等测试手段,分析了导致涂层吸收率随退火条件的不同而发生变化的主要原因。
- Hydrogen bonding configurations, Si/N and Si dangling bond densities in PECVD Si3N4 films have been measured as the function of the processing conditions and annealing temperatures in nitrogen atmosphere with IR, RBS and ESR. 用红外光谱、背散射能谱和电子自旋共振波谱研究了不同淀积条件下生长的PECVD氮化硅膜中的氢键,Si/N比和硅悬挂键。
- When annealing temperature is above 750 degrees centigrade, it is very ease for a-Si:H thin films to crystallize. 沉积a-Si：H薄膜时的衬底温度越高，得到的a-Si：H薄膜越容易晶化。
- The article introduces a way to confirm suitable annealing temperature of the aluminum alloy. 介绍了一种试验确定铝合金适宜退火温度的方法。
- The effects of annealing temperature on electrochemical performances of the alloy were investigated. 研究了退火温度对合金的电化学性能的影响。
- Results In PCR, the primer for internal reference gene, content of dNTP, and runing cycles affect the products much than the annealing temperature. 结果在pcr反应中,扩增内参照和目的基因的引物比例、底物浓度以及pcr反应的循环次数对产物的影响较大,而退火温度的影响较小。
- The present work is to investigate the effect of annealing temperature Tan on microst-ructure and superstructure of HEPP fibers by FRS-XRSA and SAXS. 本文是继应用WAXD与SAXS研究退火时间对HEPP结构影响后的第二部分工作,即退火温度的影响。 结果指出:FRS-XRSA是研究择优取向聚合物结晶与取向的合理方法;
- The variation of the dangling bonds with annealing temperature in a-Si: F produced by ion implantation is measured by EPR. 本文用电子顺磁共振(EPR)测量了离子注入a-Si:F中悬键密度随退火温度变化的关系。
- With the increasing of anneal temperature, the resistance of P-implanted TiO2 thin films decrease and their water contact angles fluctuate at 70? 随着退火温度的上升;P注入的TiO2薄膜材料电阻降低;与水的接触角在70度左右波动.
- The variation of Ni/Ge structure on different orientation substrate as a function of annealing temperature will be shown and discussed. 我们将说明在不同方向的锗基底上会随不同退火之温度而形成不同镍锗化合物并讨论之。
- At the same time, the crystallite size increases and interplanar distance decreases with the increase of annealing temperature. 同时，随着退火温度的升高，晶粒尺寸长大，晶面间距降低。
- It was found the annealing temperature and structure of PP-g-PEG had effect on the diffusion and selective aggregation in PP. 实验发现：温度和分子结构对接枝共聚物在聚丙烯改性体系中的扩散存在影响。
- Varieties of structure and performance on TZM alloy in different anneal temperature are studied through stretch test on room temperature. 通过室温拉伸试验和组织断口形貌观察,研究了TZM合金在不同退火温度下的性能与组织变化现象。
- A stable phase of Er silicide can appear certainly on the Si surface at the annealing temperature higher than a critical value of 400 oC. 退火温度高于临界值400oC时，在Si表面就会形成Er硅化物的稳定相。
- The specific resistivity changes during the different anneal temperature and the resistance relaxation time with pullin... 分析了热处理对电阻特性影响的机理。
- When the annealing temperature is high enough & the time is long enough , the crystal will be re-rime with underlay as new crystal nucleus. 当退火温度足够高、时间足够长时，晶体以衬底为新晶核再结晶。
- The annealing temperature has significant effect on microhardness of AZ31, however, the time of annealing has no effect. 退火处理温度对AZ31镁合金的硬度值有显著影响，但退火处理时间的影响却不明显。
- The effect of annealing temperature on crystalline structure and subsequently photocataytic performance of P25 and ST-41 TiO2 was examined. 研究了热处理温度对P25粉末和ST-41粉末相结构及其光催化活性的影响规律。
- Effects of annealing temperature on mechanical properties and microstructure of Fe17.80Mn4.73Si7.80Cr4.12Ni alloy fabricated by equal channel angular pressing(ECAP) were studied. 研究了退火温度对等通道转角挤压(ECAP)Fe17.;80Mn4
- Results show that the UV peak intensity is enhanced as increasing annealing temperature and dopant concentration while green emission related with deep level defects is decreased. 结果显示,薄膜的紫外峰强度随掺杂原子分数和退火温度的提高而增强,与缺陷相关的绿光强度却随着掺杂原子分数和退火温度的提高而降低;
