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- Al doped ZnO(AZO) thin films AZO薄膜
- Gas sensing property of the film was investigated at different concentration of CO gases and results show that 0.5% Al3+ doped ZnO(mol/mol) thin film shows a maximum sensitivity to CO gas. The gas sensitivity mechanism of ZnO is also discussed. 在室温下;对薄膜在不同浓度的CO气体下的敏感特性进行了研究;随着气体浓度的增加;薄膜电阻值逐渐减小; 随着掺Al量的增大;气敏灵敏性先逐渐增大后减小;发现当铝含量为r(Al:ZnO)=0.;5%25时;对CO气体的灵敏度最大;并对紫外光照射下气敏半导体薄膜的气敏机理进行了简单分析。
- Raman Spectra of Undoped and Doped ZnO Thin Films 掺杂和未掺杂氧化锌薄膜的拉曼光谱
- Al doped ZnO film Al掺杂ZnO薄膜
- Mn doped ZnO thin films 锰掺杂氧化锌薄膜
- Doped ZnO thin films 掺杂ZnO薄膜
- doped ZnO thin film 掺杂ZnO薄膜
- Effect of annealing on photoluminescence of ZnO:Al thin films prepared by sol-gel method[J]. 引用该论文 徐自强;邓宏;谢娟;李燕;陈航;祖小涛;薛书文.
- ZnO is a II-VI semiconductor material with wide band-gap, which has hexagonal wurtzite structure. ZnO thin films were widely applied in solar cell, UV detector, SAW device, gas sensor and transparent electrodes et al for their excellent properties. 氧化锌(ZnO)是一种具有六方纤锌矿晶体结构的宽禁带II-VI族半导体材料,由于其优良的特性,在太阳能电池、紫外探测器、声表面波器件、气敏传感器、透明电极等方面得到了广泛的应用。
- In In 2O 3:Mo(IMO) thin film prepared by conventional thermal reactive evaporation, the valence difference of 3 between Mo 6+ and In 3+ was much bigger than those in other TCO films such as In 2O 3:Sn, SnO 2:F and ZnO:Al. 采用反应蒸发法制备的掺钼氧化铟(In2 O3:Mo,简称 IMO)薄膜中 ,Mo6 +与 In3+的化合价态相差 3,远大于广泛研究和应用的 TCO薄膜材料 In2 O3:Sn、Sn O2 :F和 Zn O:Al中的价态差。
- K. Lin and P. Tsai, Deposition and Characterization of ZnO:Al Multi-layered Thin Films by Sol-Gel Technique, he 1st International Symposium on Transparent Conducting Oxides, 2006/10. 廖哲鸿、刘宗志、张俊男、林克默;轻型太阳光电模组效能分析、封装与量测技术之探讨;第二十三届中国机械工程学会学术研讨会;2006/12.
- Fluorescence Spectra and Charge Transfer in Doped PVK Thin Films[J]. 引用该论文 李宏建;彭景翠;瞿述;夏辉;许雪梅.
- Al-doped ZnO thin films were fabricated on glass substrates by solgel method. 采用溶胶-凝胶工艺在普通玻璃片上制备了掺铝氧化锌薄膜。
- Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature. Dietl等人的理论计算预测,p型掺杂(Zn,Mn)O可能具有室温铁磁性。
- Mechanism and fluorescence spectra of PVK thin film doped perylene[J]. 引用该论文 瞿述;李宏建;崔昊杨;赵楚军;彭景翠.
- From the PL measurement the near band edge(NBE) emission and deep-level(DL) emission are observed in unannealed AZO thin films. 未退火样品的光致发光(PL)谱由361 nm附近的紫外带边发射峰和500 nm附近的深能级发射峰组成。
- Smooth ZnO thin films have been obtained by in situ oxidation of Zinc films on mica surfaces. 摘要在云母基底上热蒸镀锌膜,再采用简单的原位氧化方法制备氧化锌薄膜。
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT/PEK-C were prepared. 制备了纳米复合材料薄膜PT/PEK-C。