Adopting a silicon-on-insulator geometry can boost the rate at which the transistors can be made to switch on and off (or, alternatively, reduce the power needed) by up to 30 percent.

• 采取绝缘层覆矽的几何结构，可以提升电晶体在开与关之间的切换速度（换种说法是降低所需的功率）达30%25之谱。